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MRF317

Tyco Electronics
Part Number MRF317
Manufacturer Tyco Electronics
Description The RF Line NPN Silicon RF Power Transistor
Published Sep 21, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF317/D The RF Line NPN Silicon RF Power Transistor . . . design...
Datasheet PDF File MRF317 PDF File

MRF317
MRF317


Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF317/D The RF Line NPN Silicon RF Power Transistor .
.
.
designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.
0 dB • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability • High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service • Guaranteed Performance in Broadband Test Fixture MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak (10 seconds) Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.
0 12 18 270 1.
54 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF317 100 W, 30–200 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
65 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.
0 — — — — — — — — — — 5.
0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.
0 Adc, VCE = 5.
0 Vdc) hFE 10 25 80 — NOTE: (continued) 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless ...


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