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P12NB30FP

ST Microelectronics
Part Number P12NB30FP
Manufacturer ST Microelectronics
Description STP12NB30
Published Sep 16, 2005
Detailed Description www.DataSheet.co.kr STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STP3NB60...
Datasheet PDF File P12NB30FP PDF File

P12NB30FP
P12NB30FP

Overview
www.
DataSheet.
co.
kr STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P s s s s s V DSS 300 V 300 V R DS(on) < 0.
40 Ω < 0.
40 Ω ID 12A 6.
5 A TYPICAL RDS(on) = 0.
34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unri...


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