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2SK3570

NEC Electronics
Part Number 2SK3570
Manufacturer NEC Electronics
Description Switching N-Channel MOSFET
Published Sep 15, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel...
Datasheet PDF File 2SK3570 PDF File

2SK3570
2SK3570

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
5 ORDERING INFORMATION PART NUMBER 2SK3570 2SK3570-S 2SK3570-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES •4.
5V drive available.
•Low on-state resistance, RDS(on)1 = 12 mΩ MAX.
(VGS = 10 V, ID = 24 A) •Low gate charge QG = 23 nC TYP.
(VDD = 16 V, VGS = 10 V, ID = 48 A) •Built-in gate protection diode •Surface mount device available 2SK3570-Z Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±48 ±160 1.
5 29 150 −55 to +150 V V A A W W °C °C Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D16256EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP (K) Printed in Japan The mark ! shows major revised points.
© 2002 2SK3570 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Cha...


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