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MTB3N60E

Motorola
Part Number MTB3N60E
Manufacturer Motorola
Title TMOS POWER FET
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N60E/D Product Preview TMOS E-F...
Features ry Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Sourc...
Published Sep 13, 2005
Datasheet PDF File MTB3N60E PDF File


MTB3N60E
MTB3N60E


Features
ry Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–repetitive Drain Current — ...



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