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MTB2N60E

Motorola
Part Number MTB2N60E
Manufacturer Motorola
Description TMOS POWER FET
Published Sep 13, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power F...
Datasheet PDF File MTB2N60E PDF File

MTB2N60E
MTB2N60E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.
™ High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor ...


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