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IRFD120

Part Number	IRFD120
Manufacturer	Fairchild Semiconductor
Description	N-Channel Power MOSFET
Published	Sep 13, 2005
Detailed Description	IRFD120 Data Sheet January 2002 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, t...
Datasheet	IRFD120 PDF File

Overview

IRFD120 Data Sheet January 2002 1.
3A, 100V, 0.
300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17401.
Features • 1.
3A, 100V • rDS(ON) = 0.
300Ω • Single Pulse Avalanche Energy Rated • SOA i...

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