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MRF6409

Motorola
Part Number MRF6409
Manufacturer Motorola
Published Sep 12, 2005
Description RF POWER TRANSISTOR
Detailed Description MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6409/D NPN Silicon RF Power Transistor Th...
Datasheet PDF File MRF6409 PDF File

MRF6409
MRF6409


Overview
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6409/D NPN Silicon RF Power Transistor The MRF6409 is designed for GSM base stations applications.
It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
• To be used in Class AB • Specified 26 Volts, 960 MHz Characteristics Output Power — 20 Watts CW Gain — 11 dB Typ Efficiency — 60% Typ MRF6409 20 W, 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 319–07, STYLE 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Symbol Min Typ Value 24 55 4.
0 5.
0 45 0.
26 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 3.
8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Emitter–Base Breakdown Voltage (IB = 5.
0 mAdc, IC =0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector–Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)EBO V(BR)CES ICES 24 4.
0 55 — 30 5.
0 60 — — — — 6.
0 Vdc Vdc Vdc mA (1) Thermal resistance is determined under specified RF operating condition.
RF DEVICE DATA ©MOTOROLA Motorola, Inc.
1997 MRF6409 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (ICE = 1.
0 Adc, VCE = 5.
0 Vdc) hFE 20 35 80 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.
0 MHz) Cob — 18 — pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 20...


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