SILICON PNP TRANSISTOR - ST Microelectronics
Description
® BSS44
SILICON PNP TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s PNP TRANSISTOR
DESCRIPTION
The BSS44 is a silicon epitaxial planar PNP
transistor in Jedec TO-39 metal case.
It is used
for high-current switching and power applications
lete Product(s)up to 5 A.
TO-39 INTERNAL SCHEMATIC DIAGRAM
olete Product(s) - ObsoABSOLUTE MAXIMUM RATINGS
bsSymbol
Parameter
O VCBO Collector-Base Voltage (IE = 0)
Value - 65
Unit V
VCEO Collector-Emitter Voltage (IB = 0)
- 60 V
VEBO Emitter-Base Voltage (IC = 0)
-6 V
IC Collector Current Ptot Total Dissipation at Tcase ≤ 25 oC
Tamb ≤ 25 oC Tstg Storage Temperature
Tj Max.
Operating Junction Temperature
-5 5 0.
87 -65 to 200 200
A
W W oC oC
December 2000
1/4
BSS44
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-amb
Max Max
35 200
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES Collector Cut-off
VCE = -60 V
-0.
5 µA
Current (VBE=0)
V(B
R
)C
∗ BO
Collector-base
IC = -1 mA
-65 V
Breakdown Voltage
(IE = 0)
V
C
EO(sus
∗ )
Collector-Emitter
IC = -50 mA
-60 V
Sustaining Voltage
(IB = 0)
VE
∗ BO
)VCE(sat)∗
ct(sV
∗ BE(sat)
roduhFE∗
Emitter-base Voltage (IC = 0)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
te Pf
∗ T
Transition Frequency
IE =.
- 1 mA
IC = -0.
5 A IC = - 5 A IC = -0.
5 A IC = - 5 A IC = -0.
5 A IC = -2 A IC = -5 A IC = -0.
5 A
IB = -50 mA IB = -0.
5 A
IB = -50 mA IB = -0.
5 A
VCE = -2 V VCE = -2 V VCE = -2 V
VCE = -5 V
oleCCBO
Collector-base Capacitance
IE = 0 f = 1 MHz
VCB = 10 V
ston Turn-on Time btoff Turn-off Time
IC = -0.
5 A IB1 = -IB2 = -50 mA
Obsolete Product(s) - O∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.
5 %
VCC = -20 V
-6 V
-0.
1 -0.
4 -1
V V
-0.
8 -1.
1 -1.
6
V V
30 40 70
45
80 MHz
100 pF
0.
065 0.
45
µs µs
2/4
TO-39 MECHANICAL DATA
BSS44
DIM.
MIN.
mm TYP.
M...
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