DatasheetsPDF.com

BSS131

INFINEON
Part Number BSS131
Manufacturer INFINEON
Description SIPMOS Small-Signal-Transistor
Published Sep 5, 2005
Detailed Description Type BSS131 SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated Produ...
Datasheet PDF File BSS131 PDF File

BSS131
BSS131

Overview
Type BSS131 SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated Product Summary V DS R DS(on),max ID 240 14 0.
1 V Ω A SOT-23 Type BSS131 BSS131 Package SOT23 SOT23 Ordering Code Q62702-S565 Q67000-S229 Tape and Reel Information E6327 E6433 Marking SRs SRs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.
1 A, V DS=192 V, di /dt =200 A/µs, T j,max=150 °C Value 0.
11 0.
09 0.
4 Unit A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 V P tot T j, T stg T A=25 °C 0.
36 -55 .
.
.
150 55/150/56 W °C Rev.
2.
0 page 1 2004-04-29 BSS131 Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 350 K/W Values typ.
max.
Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I D (off) V DS=0 V, I D=56 µA V DS=240 V, V GS=0 V, T j=25 °C V DS=240 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=0.
09 A V GS=10 V, I D=0.
1 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.
08 A 240 0.
8 1.
4 1.
8 0.
01 µA V 0.
06 9.
07 7.
7 0.
13 5 10 20 14 S nA Ω Rev.
2.
0 page 2 2004-04-29 BSS131 Parameter Symbol Conditions min.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)