P-channel enhancement mode vertical D-MOS transistor - NXP
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
BSS110 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC07 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc.
• High speed switching • No secondary breakdown.
APPLICATIONS • Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers.
DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.
handbook, halfpage
BSS110
d
1
2 3 g
MAM144
s
Fig.
1 Simplified outline and symbol.
PINNING - TO-92 variant PIN 1 2 3 SYMBOL s g d DESCRIPTION source gate drain CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA SYMBOL VDS VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −170 mA; VGS = −10 V up to Tamb = 25 °C open drain ID = −1 mA; VDS = VGS CONDITIONS − − −0.
8 − − − MIN.
MAX.
−50 ±20 −2 −170 10 830 V V V mA Ω mW UNIT
1995 Apr 07
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature up to Tamb = 25 °C; note 1 open drain CONDITIONS − − − − − −65 − MIN.
BSS110
MAX.
−50 ±20 −170 −520 830 +150 150 V V
UNIT
mA mA mW °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient...
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