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SS9011

Fairchild Semiconductor
Part Number SS9011
Manufacturer Fairchild Semiconductor
Published Aug 23, 2005
Description NPN Epitaxial Silicon Transistor
Detailed Description SS9011 SS9011 AM Converter, AM/FM IF Amplifier General Purpose T
Datasheet PDF File SS9011 PDF File

SS9011
SS9011


Overview
SS9011 SS9011 AM Converter, AM/FM IF Amplifier General Purpose Transistor 1 TO-92 1.
Emitter 2.
Base 3.
Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 50 30 5 30 400 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) Cob fT NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure Test Condition IC = 100µA, IE =0 IC =1mA, IB =0 IE = 100µA, IC =0 VCB = 50V, IE =0 VEB = 5V, IC =0 VCE = 5V, IC = 1mA IC = 10mA, IB = 1mA VCE = 5V, IC = 1mA VCB = 10V, IE = 0 f = 1MHz VCE = 5V, IC = 1mA VCE = 5V, IC = 1.
0 mA f=1MHz, RS = 500Ω 0.
65 150 28 90 0.
08 0.
7 1.
5 370 2.
0 4.
0 Min.
50 30 5 100 100 198 0.
3 0.
75 V V pF MHz dB Typ.
Max.
Units V V V nA nA hFE Classification Classification hFE D 28 ~ 45 E 39 ~ 60 F 54 ~ 80 G 72 ~ 108 H 97 ~ 146 I 132 ~ 198 ©2002 Fairchild Semiconductor Corporation Rev.
A4, November 2002 SS9011 Typical Characteristics 50 1000 VCE = 5V IC[mA], COLLECTOR CURRENT 40 hFE, DC CURRENT GAIN 30 IB=450µA IB=400µA IB=350µA IB=300µA IB=250µA IB=200µA 100 20 IB=150µA IB=100µA 10 10 IB=50µA 0 0 20 40 60 80 100 1 0.
1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1.
Static Characteristic Figure 2.
DC current Gain 1000 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE=5V VBE(sat) 100 100 VCE(sat) IC=10IB 10 10 1 10 100 1 0.
1 1 10 100 1000 IC[mA], C...


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