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IRGPH40M

Part Number	IRGPH40M
Manufacturer	IRF
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Aug 23, 2005
Detailed Description	Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1029 IRGPH40M INSULATED GATE BIPOLAR TRANSIST...
Datasheet	IRGPH40M PDF File

Overview

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.
1029 IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) ≤ 3.
4V @VGE = 15V, I C = 18A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, h...

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