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IRGPH40F

Part Number	IRGPH40F
Manufacturer	IRF
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Aug 23, 2005
Detailed Description	Previous Datasheet Index Next Data Sheet PD - 9.764 IRGPH40F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-...
Datasheet	IRGPH40F PDF File

Overview

Previous Datasheet Index Next Data Sheet PD - 9.
764 IRGPH40F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) ≤ 3.
3V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC Absolute ...

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