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IRGPH30MD2

Part Number	IRGPH30MD2
Manufacturer	IRF
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Aug 23, 2005
Detailed Description	Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSI...
Datasheet	IRGPH30MD2 PDF File

Overview

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.
1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) C Short Circuit Rated Fast CoPack IGBT VCES = 1200V VCE(sat) ≤ 3.
5V G @VGE = 15V, IC = 9.
0A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.
They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-247AC Max.
1200 15 9.
0 30 30 6.
0 30 10 ± 20 100 42 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
— — — — — Typ.
— — 0.
24 — 6 (0.
21) Max.
1.
2 2.
5 — 40 — Units °C/W g (oz) Revision 2 C-477 To Order Previous Datasheet Index Next Data Sheet IRGPH30MD2 Electrical Characterist...

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IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR - IRF

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