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PD - 9. 692A
IRGPC40S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve
G E C
Standard Speed IGBT
VCES = 600V VCE(sat) ≤ 1. 8V
@VGE = 15V, IC = 31A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 50 31 240 120 ±20 15 160 65 -55 to +150 300 (0. 063 in. (1. 6mm) from case) 10 lbf•in (1. 1N•m)
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
— — — —
Typ.
— 0. 24 — 6 (0. 21)
Max.
0. 77 — 40 —
Units
°C/W g (oz)
C-27
To Order
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IRGPC40S
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
∆V(BR)CES/∆TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES
Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance...
IRGPC40S PDF File
