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IRGPC30M

Part Number	IRGPC30M
Manufacturer	IRF
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Aug 23, 2005
Detailed Description	Previous Datasheet Index Next Data Sheet PD - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Features • Short cir...
Datasheet	IRGPC30M PDF File

Overview

Previous Datasheet Index Next Data Sheet PD - 9.
1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(sat) ≤ 2.
9V @VGE = 15V, I C = 16A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a hos...

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