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IRGPC40M

IRF

INSULATED GATE BIPOLAR TRANSISTOR - IRF

IRGPC40M
IRGPC40M

PDF File IRGPC40M PDF File


Description
Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.
1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(typ) ≤ 2.
0V @VGE = 15V, I C = 24A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600 40 24 80 80 10 ±20 15 160 65 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m) Units V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
— — — — Typ.
— 0.
24 — 6 (0.
21) Max.
0.
77 — 40 — Units °C/W g (oz) Revision 1 C-327 To Order Previous Datasheet Index Next Data Sheet IRGPC40M Electrical Characteristics @ T J = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(on) Parameter Collector-to-Emitter Break...


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