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IRG4PH40UD2-EP

Part Number	IRG4PH40UD2-EP
Manufacturer	IRF
Description	Insulated Gate Bipolar Transistor
Published	Aug 19, 2005
Detailed Description	PD - 95239 IRG4PH40UD2-EP UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGB...
Datasheet	IRG4PH40UD2-EP PDF File

Overview

PD - 95239 IRG4PH40UD2-EP UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads Lead-Free Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ.
= 2.
43V @VGE = 15V, IC = 21A Benefits n-channel Applications Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less / no...

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