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IRG4PH40UD2-E

Part Number	IRG4PH40UD2-E
Manufacturer	IRF
Description	Insulated Gate Bipolar Transistor
Published	Aug 19, 2005
Detailed Description	PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast Co...
Datasheet	IRG4PH40UD2-E PDF File

Overview

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads G E VCE(on) typ.
= 2.
43V @VGE = 15V, IC = 21A Benefits n-channel Applications Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less / no snubbing I...

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