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IRG4PH40UD2PBF

IRF
Part Number IRG4PH40UD2PBF
Manufacturer IRF
Description Insulated Gate Bipolar Transistor
Published Aug 19, 2005
Detailed Description PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Op...
Datasheet PDF File IRG4PH40UD2PBF PDF File

IRG4PH40UD2PBF
IRG4PH40UD2PBF

Overview
PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ.
= 1.
72V @VGE = 15V, IC = 20A n-channel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED...


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