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IRFS650A

Fairchild
Part Number IRFS650A
Manufacturer Fairchild
Description Advanced Power MOSFET
Published Aug 16, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRFS650A PDF File

IRFS650A
IRFS650A


Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 0.
071 Ω (Typ.
) 1 IRFS650A BVDSS = 200 V RDS(on) = 0.
085 Ω ID = 15.
8 A TO-220F 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 oC ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o Value 200 15.
8 10 112 + _ 30 666 15.
8 5 5.
0 50 0.
4 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ C o O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--Max.
2.
51 62.
5 Units o C/W Rev.
B ©1999 Fairchild Semiconductor Corporation IRFS650A Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 200 -2.
0 -----------------0.
24 ------15.
22 410 200 21 20 77 38 95 18 45.
3 --4.
0 100 -100 10 100 0.
085 -475 230 50 50 160 90 123 --nC ns µA Ω Ω pF V V nA N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Test Condi...


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