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IRFSL3207

IRF
Part Number IRFSL3207
Manufacturer IRF
Description HEXFET Power MOSFET
Published Aug 16, 2005
Detailed Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet PDF File IRFSL3207 PDF File

IRFSL3207
IRFSL3207

Overview
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96893A IRFB3207 IRFS3207 IRFSL3207 HEXFET® Power MOSFET D VDSS RDS(on) typ.
max.
S ID 75V 3.
6m: 4.
5m: 180A G DS TO-220AB IRFB3207 G DS D2Pak IRFS3207 G DS TO-262 IRFSL3207 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor VGS dV/dt Gate-to-Source Voltage Peak Diode Recovery f TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e IAR Avalanche Current c EAR Repetitive Avalanche Energy g Thermal Resistance Symbol Parameter RθJC RθCS RθJA RθJA Junction-to-Case k Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 k Junction-to-Ambient (PCB Mount) , D2Pak jk www.
irf.
com Max.
180c 130c 720 330 2.
2 ± 20 5.
8 -55 to + 175 300 10lbxin (1.
1Nxm) 910 See Fig.
14, 15, 16a, 16b, Typ.
––– 0.
50 ––– ––– Max.
0.
45 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 11/3/04 IRF/B/S/SL3207 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current 75 ––– ––– 2.
0 ––– ––– IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– RG Gate Input Resistance ––– Dynamic...


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