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K2717

Toshiba
Part Number K2717
Manufacturer Toshiba
Published Aug 10, 2005
Description Silicon N Channel MOS Type Field Effect Transistor
Detailed Description 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Typ
Datasheet PDF File K2717 PDF File

K2717
K2717


Overview
2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.
3 Ω (typ.
) l High forward transfer admittance : |Yfs| = 4.
4 S (typ.
) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement−mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Thermal Characteristics Rating 900 900 ±30 5 15 45 595 5 4.
5 150 −55~150 Unit V V V A W mJ A mJ °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.
9 g (typ.
) Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.
78 62.
5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.
6 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±30 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.
0 A VDS = 20 V, ID =...


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