NPN Darlington transistor - Philips
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
MPSA14 NPN Darlington transistor
Product specification Supersedes data of 1997 Apr 24 1999 Apr 27
Philips Semiconductors
Product specification
NPN Darlington transistor
FEATURES • High current (max.
500 mA) • Low voltage (max.
30 V) • High DC current gain (min.
10000).
APPLICATIONS • High gain amplification.
handbook, halfpage
MPSA14
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
2
1
DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package.
PNP complement: MPSA64.
1
2 3 TR1 TR2
MAM252
3
Fig.
1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN.
MAX.
30 30 10 500 1 100 500 +150 150 +150 V V V mA A mA mW °C °C °C UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN Darlington transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE VCEsat VBEsat VBEon fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter on-state voltage transition frequency CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 10 V IC = 10 mA; VCE = 5 V; see Fig.
2 IC = 100 mA; VCE = 5 V; see Fig.
2 IC = 100 mA; IB = 0.
1 mA IC = 100 mA; IB = 0.
1 mA IC = 100 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz − − 10000 20000 − − − 125 MIN.
PARAMETER thermal resistan...
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