SIPMOS Power-Transistor - Infineon Technologies
Description
Preliminary data
SPI10N10 SPP10N10,SPB10N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 170 10.
3
P-TO220-3-1
V A
m
Type SPP10N10 SPB10N10 SPI10N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120
Marking 10N10 10N10 10N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 10.
3 7.
8
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
41.
2 60 6 ±20 50 -55.
.
.
+175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =10.
3 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =10.
3A, VDS =80V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-31
Preliminary data
SPI10N10 SPP10N10,SPB10N10
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min.
footprint @ 6 cm 2 cooling area
F)
Symbol min.
RthJC RthJA RthJA -
Values typ.
max.
3 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.
1
Values typ.
3 max.
4
Unit
V
Gate threshold voltage, VGS = VDS
ID = 21 µA
Zero gate voltage drain current
VDS =100V, VGS=0V, Tj =25°C VDS =100V, VGS=0V, Tj =125°C
µA 0.
01 1 1 137 1 100 100 170 nA m
Gate-source leakage current
VGS =20V, VDS =0V
Drain-source on-state resistance
VGS =10V, ID =7.
8A
1Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown air.
Page 2
2002-01-31
Preliminary data
SPI10N10 SPP10N10,...
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