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SPD30N08S2-22

Infineon Technologies
Part Number SPD30N08S2-22
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPD30N08S2-22 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 75 21.5 30 P- TO252 -3-11 ...
Datasheet PDF File SPD30N08S2-22 PDF File

SPD30N08S2-22
SPD30N08S2-22

Overview
SPD30N08S2-22 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 75 21.
5 30 P- TO252 -3-11 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD30N08S2-22 Package Ordering Code P- TO252 -3-11 Q67060-S7413 Marking 2N0822 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 240 14 6 ±20 136 -55.
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+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=...


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