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2N2369

Part Number	2N2369
Manufacturer	STMicroelectronics
Description	Silicon Planar Epitaxial NPN transistor
Published	May 28, 2005
Detailed Description	2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-1...
Datasheet	2N2369 PDF File

Overview

2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case.
It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.
TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO I CM Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current (t = 10 µs) Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.
5 0.
5 0.
36 1.
2 0.
68 – 65 to 200...

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