DatasheetsPDF.com

S849T

Vishay Telefunken
Part Number S849T
Manufacturer Vishay Telefunken
Published May 17, 2005
Description MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage
Detailed Description S849T/S849TR Vishay Telefunken MOSMIC® for TV–Tun
Datasheet PDF File S849T PDF File

S849T
S849T


Overview
S849T/S849TR Vishay Telefunken MOSMIC® for TV–Tuner Prestage with 12 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device.
Observe precautions for handling.
C block AGC RF in C block G2 G1 S D RF out C block 94 9296 Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 12 V supply voltage.
RFC VDD Features D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulation at gain reduction D High AGC-range D SMD package 1 2 2 1 94 9279 13 579 94 9278 95 10831 3 4 4 3 S849T Marking: 849 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 S849TR Marking: 49R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 16 ID 30 ±IG1/G2SM 10 ±VG1/G2SM 7.
5 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA V mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.
5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85051 Rev.
3, 20-Jan-99 www.
vishay.
de • FaxBack +1-408-970-5600 1 (8) S849T/S849TR Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Self-biased operating current Gate 2 - source cut-off voltage Test Conditions ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 6 V, VG2S = VDS = 0 –VG1S = 6 V, VG2S = VDS = 0 ±VG2S = 6 V, VG1S = VDS = 0 VDS = 12 V, VG1S = 0, VG2S = 6 V VDS = 12 V, ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)