Power MOSFET - ON Semiconductor
Description
NTB65N02R, NTP65N02R Product Preview Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
http://onsemi.
com Features
• • • • •
Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Fast Switching
65 A, 24 V RDS(on) = 8.
3 mW (TYP)
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter Drain–to–Source Voltage Gate–to–Source Voltage Continuous Symbol VDSS VGS ID IDM PD TJ and Tstg EAS Value 24 ±20 65 160 78 –55 to 150 TBD Unit Vdc Vdc A A W °C 4 mJ TO–220AB CASE 221A Style 5 xxxxx YWW S G
Drain Current (Continuous @ TA = 25°C (Note 3) Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Single Pulse Drain–to Source Avalanche Energy – Starting TJ=25°C (VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH, RG = 25 W) Thermal Resistance Junction–to–Case Junction–to–Ambient (Note 1) Junction–to–Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 10 Seconds
MARKING DIAGRAMS
RqJC RqJA RqJA TL
1.
6 67 120 260
°C/W 1 °C D2PAK CASE 418B Style 2 2 3
1.
When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.
127 in2).
2.
When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.
412 in2).
3.
Chip current capability limited by package.
4 2 1 3
xxxxx YWW
PIN ASSIGNMENT
PIN 1 2 3 4 FUNCTION Gate Drain Source Drain
xxxxx Y WW
= Specific Device Code = Year = Work Week
ORDERING INFORMATION
Device NTB65N02R NTB65N02RT4 Package D2PAK D2PAK TO–220AB Shipping 50 Units/Rail 800 Tape & Reel 50 Units/Rail
This document contains information on a product under development.
ON Semiconductor reserves the right to change or discontinue this product without notice.
NTP65N02R
© Semiconductor Components Industries, LLC, 2002
1
October, 2002 – Rev.
0
Publication Order Number: NTB65N02R/D
NTB65N02R, NTP65N02R
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteri...
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