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NE34018-T1

NEC
Part Number NE34018-T1
Manufacturer NEC
Description L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Published May 12, 2005
Detailed Description DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET ...
Datasheet PDF File NE34018-T1 PDF File

NE34018-T1
NE34018-T1


Overview
DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package.
PACKAGE DIMENSIONS in millimeters FEATURES x Low noise figure NF = 0.
6 dB TYP.
at f = 2 GHz 2 2.
1 ±0.
2 1.
25 ±0.
1 (1.
25) 0.
60 0.
65 +0.
1 0.
3 +0.
1 –0.
05 0.
3 0.
4 –0.
05 0.
3 +0.
1 –0.
05 0.
15 +0.
1 –0.
05 0.
3 +0.
1 –0.
05 (1.
3) 4 0 to 0.
1 3 x High associated gain 2.
0 ±0.
2 Ga = 16 dB TYP.
at f = 2 GHz x x x V63 Gate width: Wg = 400 Pm 4 pins super mini mold Tape & reel packaging only available ORDERING INFORMATION PART NUMBER QUANTITY 3 Kpcs/Reel.
PACKING STYLE Embossed tape 8 mm wide.
Pin 3 (Source), Pin 4 (Drain) face to perforation side of the tape.
Embossed tape 8 mm wide.
Pin 1 (Source), Pin 2 (Gate) face to perforation side of the tape.
NE34018-T1 0.
9 ±0.
1 NE34018-T2 3 Kpcs/Reel.
* Please contact with responsible NEC person, if you require evaluation sample.
Unit sample quantity shall be 50 pcs.
(Part number for sample order: NE34018) ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) Drain to Source Voltage Gate to Source Voltage Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.
0 ð3.
0 IDSS 150 125 ð65 to +125 V V mA mW qC qC Document No.
P11618EJ3V0DS00 (3rd edition) Date Published September 1997 N Printed in Japan 1 PIN CONNECTIONS 1.
Source 2.
Gate 3.
Source 4.
Drain © 1996 NE34018 RECOMMENDED OPERATING CONDITION (TA = 25 qC) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN.
TYP.
2 5 MAX.
3 30 +10 UNIT V mA dBm ELECTRICAL CHARACTERISTICS (TA = 25 qC) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cut off Voltage Transconductance Noise Figure Associated Gain Power Gain Output Power at 1dB Gain Compression Point SYMBOL IGSO IDSS VGS(off) gm NF Ga Gs P(1dB) 14 MIN.
ð 30 ð0.
2 30 0.
6 16 18 15 ð0.
8 TYP.
0.
5 MAX.
10 120 ð2.
0 ð 1.
0 UNIT TEST CONDITIONS VGS = ð3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID =...


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