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NDS8934

Fairchild
Part Number NDS8934
Manufacturer Fairchild
Description Dual P-Channel MOSFET
Published May 12, 2005
Detailed Description March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancem...
Datasheet PDF File NDS8934 PDF File

NDS8934
NDS8934

Overview
March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features -3.
8A, -20V.
RDS(ON) = 0.
07Ω @ VGS = -4.
5V RDS(ON) = 0.
1Ω @ VGS = -2.
7V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.
_________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDS8934 -20 -8 (Note 1a) Units V V A - Continuous - Pulsed -3.
8 -15 2 PD Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.
6 1 0.
9 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDS8934.
SAM Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -16 V, VGS = 0 V VDS = -10 V, VGS = 0 V, TJ = 70°C Gate - Body Leakage, Forward Gate - Body Le...


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