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NDS352AP

Fairchild
Part Number NDS352AP
Manufacturer Fairchild
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P -Chan...
Datasheet PDF File NDS352AP PDF File

NDS352AP
NDS352AP

Overview
February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features -0.
9 A, -30 V.
RDS(ON) = 0.
5 Ω @ VGS = -4.
5 V RDS(ON) ...


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