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N302AP

Fairchild
Part Number N302AP
Manufacturer Fairchild
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Published May 12, 2005
Detailed Description ISL9N302AP3 January 2002 ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Descri...
Datasheet PDF File N302AP PDF File

N302AP
N302AP

Overview
ISL9N302AP3 January 2002 ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
0019Ω (Typ), VGS = 10V • rDS(ON) = 0.
0027Ω (Typ), VGS = 4.
5V • Qg (Typ) = 110nC, VGS = 5V • Qgd (Typ) = 31nC • CISS (Typ) = 11000pF Applications • DC/DC converters SOURCE DRAIN GATE D G DRAIN (FLANGE) S TO-220AB MOSFET Maximum Ratings TA = 25°C un...


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