DatasheetsPDF.com

NTE858SM

NTE Electronics
Part Number NTE858SM
Manufacturer NTE Electronics
Published May 12, 2005
Description Integrated Circuit Dual / Low-Noise JFET-Input Operational Amplifier
Detailed Description NTE858M NTE858SM Integrated Circuit Dual, Low–Noise JFET–Input Op
Datasheet PDF File NTE858SM PDF File

NTE858SM
NTE858SM



Overview
NTE858M NTE858SM Integrated Circuit Dual, Low–Noise JFET–Input Operational Amplifier Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit.
Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage.
The BIFET technology provides wide bandwidths and fast slew rates with low input bias currents, input offset currents, and supply currents.
Moreover, these devices exhibit low–noise and low harmonic distortion making them ideal for use in high–fidelity audio amplifier applications.
Features: D Available in Two Different Package Types: 8–Lead Mini DIP (NTE858M) SOIC–8 Surface Mount (NTE858SM) D Low Input Noise Voltage: 18nV√Hz Typ D Low Harmonic Distortion: 0.
01% Typ D Low Input Bias and Offset Currents D High Input Impedance: 1012Ω Typ D High Slew Rate: 13V/µs Typ D Wide Gain Bandwidth: 4MHz Typ D Low Supply Current: 1.
4mA per Amp Absolute Maximum Ratings: Supply Voltage VCC .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
+18V VEE .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–18V Differential Input Voltage, VID .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
±30V Input Voltage Range (Note 1), VIDR .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
±15V Output Short–Circuit Duration (Note 2), tS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
Continuous Power Dissipation, PD .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
680mW Derate Above TA = +47°C .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)