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PN163NC

Part Number	PN163NC
Manufacturer	Panasonic Semiconductor
Description	Silicon NPN Phototransistor
Published	May 9, 2005
Detailed Description	Phototransistors PN163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm 3.0±0.3 ...
Datasheet	PN163NC PDF File

Overview

Phototransistors PN163NC Silicon NPN Phototransistor 3.
5±0.
3 Gate the rest 2.
4 1.
1 0.
8 max.
1.
1 0.
8 Unit : mm 3.
0±0.
3 1.
95±0.
25 1.
4±0.
2 0.
9 0.
5 For optical control systems Features High sensitivity Fast response : tr = 4 µs (typ.
) Adoption of visible light cutoff resin Ultraminiature, thin side-view type package ø1.
1 R0.
5 12 min.
Not soldered 2.
15 max.
2-0.
5±0.
15 0.
3±0.
15 2 2.
54 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50 –25 to +85 –30 to +100 Unit V mA mW ˚C ˚C 1: Collector 2: Emitter Electro-Optical Chara...

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PN163NC Silicon NPN Phototransistor - Panasonic Semiconductor

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