NPN Transistor - Philips
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST5088; PMST5089 NPN general purpose transistors
Product specification Supersedes data of 1997 May 22 1999 Apr 22
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES • Low current (max.
100 mA) • Low voltage (max.
30 V).
APPLICATIONS • Low-noise input stages in audio equipment.
DESCRIPTION NPN transistor in a SC-70; SOT323 plastic package.
MARKING TYPE NUMBER PMST5088 PMST5089 Note 1.
∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO PARAMETER collector-base voltage PMST5088 PMST5089 VCEO collector-emitter voltage PMST5088 PMST5089 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base CONDITIONS open emitter MARKING CODE(1) ∗1Q ∗1R Fig.
1
1 Top view
handbook, halfpage
PMST5088; PMST5089
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
3 1 2
2
MAM062
Simplified outline (SC-70; SOT323) and symbol.
MIN.
− − − − − − − − − −65 − −65
MAX.
35 30 30 25 4.
5 100 200 100 200 +150 150 +150 V V V V V
UNIT
mA mA mA mW °C °C °C
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain PMST5088 CONDITIONS IE = 0; VCB = 20 V PARAMETER thermal resistance from junction to ambient
PMST5088; PMST5089
CONDITIONS note 1
VALUE 625
UNIT K/W
MIN.
− − − − 300 350 300 400 450 400 − − − −
MAX.
50 10 50 100 900 − − 1200 − − 500 800 4 12 − 3 2
...
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