NPN switching transistors - Philips
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBT2222; PMBT2222A NPN switching transistors
Product specification Supersedes data of 1997 Sep 09 1999 Apr 27
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES • High current (max.
600 mA) • Low voltage (max.
40 V).
APPLICATIONS • Switching and linear amplification.
DESCRIPTION NPN switching transistor in a SOT23 plastic package.
PNP complements: PMBT2907 and PMBT2907A.
MARKING TYPE NUMBER PMBT2222 PMBT2222A Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) ∗1B ∗1P
Top view
handbook, halfpage
PMBT2222; PMBT2222A
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO PARAMETER collector-base voltage PMBT2222 PMBT2222A VCEO collector-emitter voltage PMBT2222 PMBT2222A VEBO emitter-base voltage PMBT2222 PMBT2222A IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector − − − − − − −65 − −65 5 6 600 800 200 250 +150 150 +150 V V mA mA mA mW °C °C °C open base − − 30 40 V V CONDITIONS open emitter − − 60 75 V V MIN.
MAX.
UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN switching transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO PARAMETER collector cut-off current PMBT2222 collector cut-off current PMBT2222A IEBO hFE emitter cut-off current PMBT2222A DC current gain IC = 0.
1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 150 mA; VCE = 10 V IC = 150 mA; VCE = 1 V DC current gain PMBT2222 PMBT2222A VCEsat collec...
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