Silicon NPN Transistor - NTE
Description
NTE355 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz
Description: The NTE355 is designed for 12.
5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz.
Features: D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggedness.
D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.
D Exceptional Power Output Stability versus Temperature.
Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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18V Collector–Base Voltage, VCBO .
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36V Emitter–Base Voltage, VEBO .
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4V Collector Current–Continuous, IC .
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4A Total Device Dissipation (TC = +25°C, Note 1), PD .
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40W Derate Above 25°C .
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228mW/°C Storage Temperature Range, Tstg .
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–65° to +200°C Note 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO V(BR)CES Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)EBO ICBO ICES IC = 50mA, IB = 0 IC = 15mA, VBE =...
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