Silicon Complementary Transistors - NTE
Description
NTE352 Silicon NPN Transistor RF Power Amp, Driver
Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.
5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz.
Features: D Specified 12.
5V, 175MHz Characteristics: Output Power = 75W Minimum Gain = 7.
0dB Efficiency = 55% D Characterized with Series Equivalent large–Signal Impedance Parameters D Internal Matching Network Optimized for Minimum Gain Frequency Slope Response over the Range 136 to 175MHz D Load Mismatch capability at Rated POUT and Supply Voltage Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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18V Collector–Base Voltage, VCBO .
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36V Emitter–Base Voltage, VEBO .
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4V Collector Current (Peak), IC .
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20A Total Device Dissipation (Note 1, TC = +25°C), PD .
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250W Derate Above 25°C .
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1.
43mW/°C Storage Temperature Range, Tstg .
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–65° to +150°C Thermal Resuistance, Junction–to–Case (Note 2), RthJC .
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0.
7°C/W Note 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF amplifier.
Note 2.
Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
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