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NTE349

NTE

Silicon NPN Transistor - NTE

NTE349
NTE349

PDF File NTE349 PDF File


Description
NTE349 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.
6V VHF large–signal amplifier applications required in military and industrial equipment to 240MHz.
Features: D Specified 13.
6V, 175MHz Characteristics: Output Power = 10W Minimum Gain = 5.
2dB Efficiency = 50% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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18V Collector–Base Voltage, VCB .
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36V Emitter–Base Voltage, VEB .
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4V Continuous Collector Current, IC .
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2A Total Device Dissipation (TC = +25°C), PD .
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30W Derate Above 25°C .
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0171mW/°C Operating Junction Temperature Range, TJ .
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–65° to +200°C Storage Temperature Range, Tstg .
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–65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Cob VCB = 15V, IE = 0, f = 0.
1 to 1MHz – 35 70 pF hFE IC = 250mA, VCE = 5V 5 – – V(BR)CEO IC = 200mA, IB = 0 V(BR)EBO IE = 2.
5mA, IC = 0 ICBO VCB = 15V, IE = 0 18 4 – – – – – – 1.
0 V V mA Symbol Test Conditions Min Typ Max Unit Electr...


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