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NTE3321

NTE
Part Number NTE3321
Manufacturer NTE
Description Insulated Gate Bipolar Transistor
Published May 9, 2005
Detailed Description NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance...
Datasheet PDF File NTE3321 PDF File

NTE3321
NTE3321

Overview
NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCES .
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600V Gate–Emitter Voltage, VGES .
±20V Collector Current, IC DC .
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