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NTE329

NTE
Part Number NTE329
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily for use in large–signal out...
Datasheet PDF File NTE329 PDF File

NTE329
NTE329

Overview
NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily for use in large–signal output amplifier stages.
Intended for use in Citizen–Band communications equipment operating to 30MHz.
High breakdown voltages allow a high percentage of up–modulation in AM circuits.
Features: D Specified 12.
5V, 28MHz Characteristic: Power Output = 3.
5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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30V Collector–Base Voltage, VCBO .
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60V Emitter–Base Voltage, VEBO .
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3V Continuous Collector Current, IC .
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1A Total Device Dissipation (TC = +25°C, Note 1), PD .
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5W Derate above 25°C .
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28.
6mW/°C Storage Temperature Range, Tstg .
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–65° to +200°C Note 1.
This device is designed for RF operation.
The total device dissipation rating applies only when the device is operated as an RF amplifier.
Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0 V(BR)CES IC = 200mA, VBE = 0 Emitter–Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Cob VCB = 12.
5V, IE = 0, f = 1MHz – 35 70 pF hFE VCE = 2V, IC = 400mA 10 – – – V(BR)EBO IE = 1mA, IC = 0 ICBO VCB = 15...


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