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NTE326

NTE
Part Number NTE326
Manufacturer NTE
Description Silicon P-Channel JFET Transistor
Published May 9, 2005
Detailed Description NTE326 Silicon P–Channel JFET Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25°C unless other...
Datasheet PDF File NTE326 PDF File

NTE326
NTE326


Overview
NTE326 Silicon P–Channel JFET Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Gate Voltage, VDG .
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40V Reverse Gate–Source Voltage, VGSR .
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40V Forward Gate Current, IG(f) .
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10mA Total Device Dissipation (TA = +25°C), PD .
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310mW Derate Above 25°C .
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82mW/°C Operating Junction Temperature Range, TJ .
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–65° to +135°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Gate–Source Breakdown Voltage Gate Reverse Current V(BR)GSS IG = 10µA, VDS = 0 IGSS VGS(off) VGS IDSS |yfs| |yos| Ciss Crss NF en VGS = 20V, VDS = 0 VGS = 20V, VDS = 0, TA = +100°C Gate–Source Cutoff Voltage Gate–Source Voltage ON Characteristics Zero–Gate–Voltage Drain Current Small–Signal Characteristics Forward Transfer Admittance Output Admittance Input Capacitance Reverse Transfer Capacitance Functional Characteristics Noise Figure Equivalent Short–Circuit Input Noise Voltage VDS = 15V, VGS = 0, RG = 1MΩ, f = 100Hz, BW = 1Hz VDS = 15V, VGS = 0, f = 100Hz, BW = 1Hz – – 1.
0 60 2.
5 115 dB nV/pHz VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 1MHz VDS = 15V, VGS = 0, f = 1MHz 1500 – – – – – 5 1 5000 75 7 2 µmho µmho pF pF VDS = 15V, VGS = 0, f = 1kHz 2 – 9 mA ID = 1µA, VDS ...


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