Optoisolator Silicon NPN Darlington Phototransistor - NTE
Description
NTE3045 Optoisolator Silicon NPN Darlington Phototransistor Output
Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios.
Characterized for use as telephone relay drivers but provides excellent performance in interfacing and coupling systems, phase and feedback controls, solid state relays, and general purpose switching circuits.
Features: D High Sensitivity to Low Input Drive Current D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V (Min) D High Input–Output Isolation Guaranteed: VISO = 7500V (Peak) Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Input LED Reverse Voltage, VR .
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3V Continuous Forward Current, IF .
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60mA LED Power Dissipation (TA = +25°C with Negligible Power in Output Detector), PD .
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120mW Derate Above 25°C .
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1.
41mW/°C Output Detector Collector–Emitter Voltage, VCEO .
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80V Emitter–Collector Voltage, VECO .
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5V Detector Power Dissipation (TA = +25°C with Negligible Power in Input LED), PD .
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150mW Derate Above 25°C .
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1.
76mW/°C Total Device Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO .
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7500V Total Device Power Dissipatio...
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