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NTE2598

Silicon NPN Transistor - NTE

NTE2598 PDF File

Description

NTE2598 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage, Reliability D fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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1100V Collector–Emitter Voltage, VCEO .
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800V Emitter–Base Voltage, VEBO .
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7V Collector Current, IC Continuous .
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25A Peak (Note 1) .
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60A Base Current.
IB .
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12A Collector Power Dissipation (TC = +25°C), PC .
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300W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Note 1.
Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain–Bandwidth Product Output Capacitance Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.
6A VCE = 5V, IC = 8A VCE = 10V, IC = 1.
6A VCB = 10V, f = 1MHz I...

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