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NTE2597

Silicon NPN Transistor - NTE

NTE2597 PDF File

Description

NTE2597 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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1100V Collector–Emitter Voltage, VCEO .
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800V Emitter–Base Voltage, VEBO .
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7V Collector Current, IC Continuous .
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12A Peak (Note 1) .
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30A Base Current, IB .
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6A Collector Dissipation, PD TA = +25°C .
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3W TC = +25°C .
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65W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Note 1.
Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Symbol ICBO IEBO hFE VCE(sat) V...

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