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NTE2596

Silicon NPN Transistor - NTE

NTE2596 PDF File

Description

NTE2596 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–to–Base Voltage, VCBO .
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800V Collector–to–Emitter Voltage, VCEO .
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500V Emitter–to–Base Voltage, VEBO .
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7V Collector Current, IC Continuous .
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50A Peak (Note 1) .
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70A Base Current, IB .
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14A Collector Dissipation, PC TA = +25°C .
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3.
5W TC = +25°C .
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300W Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Note 1.
Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Symbol ICBO IEBO hF...

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