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NTE2519

NTE
Part Number NTE2519
Manufacturer NTE
Description Silicon Complementary Transistors
Published May 9, 2005
Detailed Description NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Breakdown Voltage D...
Datasheet PDF File NTE2519 PDF File

NTE2519
NTE2519


Overview
NTE2519 (NPN) & NTE2520 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Breakdown Voltage D Large Current Capacity D Isolated Package Applications: D Color TV Audio Output D Converters D Inverters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO .
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180V Collector to Emitter Voltage, VCEO .
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160V Emitter to Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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1.
5A Peak .
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2.
5A Collector Dissipation, PC TA = +25°C .
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1.
5W TC = +25°C .
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10W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 120V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 100mA VCE = 5V, IC = 10mA VCE = 10V, IC = 50mA Min – – 140 90 – Typ – – – – 120 Max 1.
0 1.
0 400 – – MHz Unit µA µA Elec...


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