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NTE2517

NTE
Part Number NTE2517
Manufacturer NTE
Published May 9, 2005
Description Silicon Complementary Transistors
Detailed Description NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D...
Datasheet PDF File NTE2517 PDF File

NTE2517
NTE2517


Overview
NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D High Current Capacity and Wide ASO Applications: D Voltage Regulators D Relay Drivers D Lamp Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO .
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60V Collector to Emitter Voltage, VCEO .
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50V Emitter to Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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2.
5A Peak .
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5A Collector Dissipation, PC TA = +25°C .
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1.
5W TC = +25°C .
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10W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 50V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 2A VCE = 10V, IC = 50mA Min – – 140 35 – Typ – – – – 140 Max 100 100 400 – – MHz Unit nA nA Electri...


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