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NTE2430

NTE
Part Number NTE2430
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2430 Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431) Description: The NTE2430 is a silicon NPN tran...
Datasheet PDF File NTE2430 PDF File

NTE2430
NTE2430


Overview
NTE2430 Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431) Description: The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications.
Absolute Maximum Ratings: Collector–Base Voltage (Open Emitter), VCBO .
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400V Collector–Emitter Voltage (Open Base), VCEO .
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350V Emitter–Base Voltage (Open Collector), VEBO .
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5V DC Collector Current, IC .
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1A Base Current, IB .
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500mA Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot .
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1W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–65° to +150°C Thermal Resistance, Junction–to–Ambient (Note 1), RthJA .
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125K/W Note 1.
Device mounted on a ceramic substrate; area = 2.
5cm2, thickness = 0.
7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage DC Current Gain Collector Capacitance Transitional Frequency Symbol ICES IEBO VCE(sat) VBE(sat) hFE Cc fT Test Conditions VCE = 300V, IB = 0 VEB = 5V, IC = 0 IC = 50mA, IB = 4mA IC = 50mA, IB = 4mA VCE = 10V, IC = 20mA IE = Ie = 0, VCB = 10, f = 1MHz ...


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